High-frequency amplification device

Details High-frequency amplification device High-frequency amplification device

2006-08-01

2006-08-01

Nguyen, Patricia (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including frequency-responsive means in the signal...

C330S278000, C330S067000

Reexamination Certificate

active

07084708

ABSTRACT:
A high-frequency amplification device includes a high-frequency amplifier including input and output sections, a first capacitor including first and second electrodes, and a first insulation film interposed therebetween. The first electrode is connected to the output section via a first inductor, and the second electrode is grounded. The amplification device further comprises a second capacitor including third and fourth electrodes and a second insulation film interposed therebetween. The third electrode is formed of a material substantially identical to that of the first electrode, and the fourth electrode is formed of a material substantially identical to that of the second electrode. The second insulation film is formed of a material substantially identical to that of the first insulation film and has a thickness substantially identical to that of the first insulation film.

REFERENCES:
patent: 4837536 (1989-06-01), Honjo
patent: 6400240 (2002-06-01), Nishida et al.
patent: 6556416 (2003-04-01), Kunihiro
patent: 6815796 (2004-11-01), Ota et al.
patent: 08-32018 (1996-02-01), None
patent: 08-088523 (1996-04-01), None
patent: 2002-171144 (2002-06-01), None

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