Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1995-02-14
1997-09-16
Breneman, R. Bruce
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429811, 20419224, 505475, 505476, 505731, C23C 1434
Patent
active
056676506
ABSTRACT:
An improved device for off-axis magnetron sputter deposition of inorganic oxide compounds having a sputter gun, target, substrate, gas flow means and enclosure chamber wherein the improvement comprises a hollow gas flow manifold positioned between the substrate and the target having at least one gas inlet and at least one outlet opening on the manifold, said outlet opening positioned to direct the gas flow away from the target and in the direction of the substrate, and a process for such deposition are disclosed.
REFERENCES:
patent: 4392931 (1983-07-01), Maniv et al.
patent: 4425218 (1984-01-01), Robinson
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5134117 (1992-07-01), DiIorio et al.
patent: 5252551 (1993-10-01), Wu et al.
patent: 5290758 (1994-03-01), Wordenweber
patent: 5340459 (1994-08-01), Takehara
Kageyama et al., "Effect of a declination angle of substrate position on magnetron sputter deposition from a yttrium barium copper oxide target", Apply. Phys. Lett. 55 (10), pp. 1035-1037. Sep. 4, 1989.
DiIorio, M.S. et al, "Practical high T.sub.c Josephson junctions and dc SQUIDs operating above 85 K," Appl. Phys. Lett. 58(22), 2552-2554 (1991).
Kocian, P. et al., "Influence of Gas Flow Direction on DC Glow-Discharge Deposited a-Si Films," J. of Non-Crystalline Solids 59 & 60, 675-678 (1983).
Ishii, K., "High-rate Low Kinetic Energy Gas-flow-sputtering System," J. Vac. Sci. Technol. A, 7, 256-258 (1989).
Dong, Z.W. et al, "A Method for Increasing the I.sub.c R.sub.n Products in YBCO/Au/YBCO Junctions," Oral presentation at Workshop on HTS Josephson Jucntions and 3-Terminal Devices, Univ. of Twente Enschede, The Netherlands, Mar. 2-4, 1994.
Reintsema, C.D. et al. (Electromagnetc Technology Division, NIST, Boulder, CO), "The Critical Current and Normal Resistance of High-T.sub.c Step-Edge SNS Junctions," (manuscript submitted Oct. 16, 1994).
Jung, T. et al, "High Rate Deposition of Alumina Films by Reactive Gas flow Sputtering," Surface and Coatings Technology, 59, 171-176 (1993).
Maniv, S. et al, "High Rate Deposition of Transparent Conducting Films by Modified Reactive Planar Magnetron Sputtering of Cd.sub.2 Sn Alloy," J. Vac. Sci. Technol., 18(2), 195-198 (1981).
"The Top Sputtering Gun," AJA International.
Ishii, K. et al, "Sputtering of Cu in a High Pressure Atmosphere", Appl. Sur. Science 33/34, North-Holland, Amsterdam, 1107-1113 (1988).
Ishii, K. et al, "Iron Films Sputter-deposited by Utilizing Ar Gas Flow," IEEE Transactions on Magnetics, MAG-23(5), 2734-2736 Sep. (1987).
Eom, C.B. et al, "Synthesis and properties of YBa.sub.2 Cu.sub.3 O.sub.7 thin films grown in situ by 90.degree. off-axis single magnetron sputtering," Physica C 171, North-Holland, Amsterdam, 354-382 (1990).
Fursenko, A.A. et al, "Mathematical Simulation of Transport Processes in Modern Sputter-deposition Techniques of Thin Films," J. of Crystal Growth 148, 155-164 (1995).
Face Dean Willett
Myers Kirsten Elizabeth
Breneman R. Bruce
E. I. Du Pont de Nemours and Company
McDonald Rodney G.
LandOfFree
High flow gas manifold for high rate, off-axis sputter depositio does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High flow gas manifold for high rate, off-axis sputter depositio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High flow gas manifold for high rate, off-axis sputter depositio will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-215487