High field surface ionization process and apparatus for purifyin

Details High field surface ionization process and apparatus for purifyin High field surface ionization process and apparatus for purifyin

1982-03-05

1984-07-31

Bernstein, Hiram H.

Chemistry: physical processes

Physical processes

423348, 204164, C01B 3302

Patent

active

044628064

ABSTRACT:
Impure silicon, in relatively thin sheet form is purified by heating it in the presence of a strong electric field to ionize and remove impurity elements. Ion bombardment may be used to dislodge impurities accumulating on the surface of the sheet.

REFERENCES:
patent: 2854363 (1958-09-01), Seiler
patent: 2898243 (1959-08-01), Wenden
patent: 3755092 (1972-08-01), Antula
Pamplin Crystal Growth, 2nd ed., 1980, Pergamon, N.Y. p. 112-115.

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