High field capacitor structure employing a carrier trapping regi

Details High field capacitor structure employing a carrier trapping regi High field capacitor structure employing a carrier trapping regi

1977-06-21

1979-03-06

Edlow, Matin H.

357 23, 357 59, 357 91, H01L 2934

Patent

active

041433939

ABSTRACT:
A high field capacitor structure includes an insulating layer having a carrier trapping region between two electrodes. The trapping region improves electric breakdown characteristics of the capacitor structure and is particularly useful in avoiding the low breakdown voltages and high leakage currents normally encountered in structures with asperities, such as SiO.sub.2 over poly Si. The trapping region can be formed by chemical vapor deposition (CVD) process, by evaporation or by ion implantation. The trapping region is close to the Si, but far enough away to eliminate the possibility of reverse tunneling from discharging the traps in the absence of an applied voltage.

REFERENCES:
patent: 3972059 (1976-07-01), DiStefano
patent: 4004159 (1977-01-01), Rai
patent: 4027320 (1977-05-01), Jacobs
patent: 4047974 (1977-09-01), Harari

Affiliated with

Also associated with

Rating

High field capacitor structure employing a carrier trapping regi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High field capacitor structure employing a carrier trapping regi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High field capacitor structure employing a carrier trapping regi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-924133