High energy optically controlled kilovolt semiconductor switch

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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250211J, H01L 2714, H01J 4014

Patent

active

H00006955

ABSTRACT:
A high energy, optically controlled kilovolt semiconductor switch is provd including a bulk piece of high resistivity semiconductor for illumination by a high speed laser, said semiconductor having a thick highly doped epitaxial layer of P+ impurity grown on one side of the semiconductor, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the semiconductor with metallic electrodes deposited on the respective epitaxial layers using standard ohmic contact procedures.

REFERENCES:
patent: 3399313 (1968-08-01), Sawyer
patent: 4218618 (1980-08-01), Mourou
patent: 4240088 (1980-12-01), Myers
patent: 4348546 (1982-09-01), Little

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