Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1987-10-23
1989-10-03
Buczinski, Stephen C.
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
250211J, H01L 2714, H01J 4014
Patent
active
H00006955
ABSTRACT:
A high energy, optically controlled kilovolt semiconductor switch is provd including a bulk piece of high resistivity semiconductor for illumination by a high speed laser, said semiconductor having a thick highly doped epitaxial layer of P+ impurity grown on one side of the semiconductor, and a thick highly doped epitaxial layer of N+ impurity grown on the opposite side of the semiconductor with metallic electrodes deposited on the respective epitaxial layers using standard ohmic contact procedures.
REFERENCES:
patent: 3399313 (1968-08-01), Sawyer
patent: 4218618 (1980-08-01), Mourou
patent: 4240088 (1980-12-01), Myers
patent: 4348546 (1982-09-01), Little
Bovino Lawrence J.
Burke Terence
Kim Anderson H.
Weiner Maurice
Buczinski Stephen C.
Gordon Roy E.
Kanars Sheldon
The United States of America as represented by the Secretary of
Wallace Linda J.
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