High energy laser mask and method of making same

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430323, 430324, 430945, 378 35, 156626, G03F 100

Patent

active

049237721

ABSTRACT:
The present invention is a mask and methods for making masks for use with a laser projection etching system. The unique mask is able to withstand the fluences of the high energy and high power lasers used without degrading. Specifically, the new projection etching masks are fabricated of patterned multiple dielectric layers having alternating high and low indices of refraction on a UV grade synthetic fused silica substrate in order to achieve maximum reflectivity of the laser energy in the opague areas and maximum transmissivity of the laser energy in the transparent areas of the mask.

REFERENCES:
patent: 4440841 (1984-04-01), Tabuchi
patent: 4447905 (1984-05-01), Dixon et al.
patent: 4478677 (1984-10-01), Chen et al.
patent: 4490210 (1984-12-01), Chen et al.
patent: 4490211 (1985-12-01), Chen et al.
patent: 4514896 (1985-05-01), Dixon et al.
patent: 4522862 (1985-06-01), Bayer et al.
IBM Technical Disclosure Bulletin, vol. 13, No. 1, Jun. 1970, p. 158, New York, U.S.; W. M. Moreau et al.: "Dielectric Photomasks".
Research Disclosure, No. 258-25856, Oct. 1985, anonymous, "Damage Resistant Metal Projection Masks for High Intensity UV Radiation".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High energy laser mask and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High energy laser mask and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High energy laser mask and method of making same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2348690

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.