High energy density ultracapacitor

Metal working – Barrier layer or semiconductor device making – Barrier layer device making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07976587

ABSTRACT:
The invention is directed to a carbon composition produced from a carbon precursor, a carbon precursor modifier, and an additive, wherein a mixture of the recited components is formed, the carbon precursor is cured, the resulting mixture carbonized to produce a porous carbon composition. Also disclosed are methods for preparing the carbon composition and for using the carbon composition to fabricate electrodes and electric double layer capacitors comprising the carbon composition.

REFERENCES:
patent: 6201685 (2001-03-01), Jerabek et al.
patent: 6212062 (2001-04-01), Day et al.
patent: 6225733 (2001-05-01), Gadkaree et al.
patent: 6304426 (2001-10-01), Wei et al.
patent: 6487066 (2002-11-01), Niiori et al.
patent: 6565701 (2003-05-01), Jerabek et al.
patent: 6565763 (2003-05-01), Asakawa et al.
patent: 6714391 (2004-03-01), Wilk et al.
patent: 6738252 (2004-05-01), Okamura et al.
patent: 2004/0085710 (2004-05-01), Takeuchi et al.
patent: 2005/0169829 (2005-08-01), Dai et al.
patent: 4-175277 (1992-06-01), None
patent: 5-21274 (1993-01-01), None
patent: 1-196807 (1999-08-01), None
patent: 2005-235918 (2005-09-01), None
patent: 2007-91511 (2007-04-01), None
patent: 2003-0033789 (2003-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High energy density ultracapacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High energy density ultracapacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High energy density ultracapacitor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2713505

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.