High-endurance memory device

Details High-endurance memory device High-endurance memory device

2007-02-02

2008-09-02

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185090, C365S185200

Reexamination Certificate

active

07420845

ABSTRACT:
A memory device includes a set of memory cells, each of which is capable of being selected to generate a sensing current depending on a logic state thereof, and a set of reference cells, each of which is capable of being selected to generate a reference current. A sense amplifier is coupled to the memory cells and the reference cells for comparing the sensing current with the reference current to generate a signal representing the logic state of the selected memory cell. The memory cells and the reference cells are subject to the same operation cycles, such that a difference between the sensing current and the reference current remains a constant.

REFERENCES:
patent: 7180795 (2007-02-01), Chan et al.

Affiliated with

Also associated with

Rating

High-endurance memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-endurance memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-endurance memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3977593