High electron mobility transparent conductor

Details High electron mobility transparent conductor High electron mobility transparent conductor

1999-02-11

2000-08-08

Turner, Archene

Stock material or miscellaneous articles

Composite

Of quartz or glass

428426, 428697, 428698, 428699, 428701, 428702, H01L 319

Patent

active

060999705

ABSTRACT:
A transparent electrical conductor which provides relatively high electrical conductivity and transmittance in the visible
ear-infrared (VNIR), relative to known transparent electrical conductors, such as tin-doped indium oxide (ITO). In one embodiment of the invention, the transparent electrical conductor is formed from a plurality of quantum wells formed between the interfaces of three layers of lattice-matched, wide band gap materials, such as AlGaN and GaN. In an alternative embodiment of the invention, a material with a band gap much larger than known materials used for such transparent electrical conductors, such as ITO, is selected. Both embodiments of the invention may be formed on a transparent substrate and provide relatively better transmittance in the VNIR at sheet electrical resistances of four or less ohms/square than known materials, such as tin-doped indium oxide (ITO).

REFERENCES:
patent: 4862471 (1989-08-01), Pankove
English abstract of JP 06-053532, Feb. 25, 1994.
Sitar et al "AIN/GaN Superlattices Grown By Gas SourceMolecular BeamEpitaxy", 17th Int'l Conf. on Metallurgical Coatings and 8th Inter'l Conference on ThinFilm, San Diego, CA, pp. 311-320, Apr. 2, 1990.
Bhargava "Blue and UV Light Emitting Diodes and Lasers", Optoelectronics Devices andTechnologies, vol. 7, No. 1, pp. 19-47, Jun. 1992.

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