High electron mobility transistor including periodic heterojunct

Details High electron mobility transistor including periodic heterojunct High electron mobility transistor including periodic heterojunct

1994-10-26

1996-06-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257286, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

055302726

ABSTRACT:
A compound semiconductor device includes a carrier supply layer supplying free charge carriers and having high dopant impurity concentration regions with a prescribed width, disposed in stripe shapes along a main current flow direction, parallel to each other, and spaced at an interval, and a carrier channel layer to which free charge carriers are supplied from the carrier supply layer including an electron channel having a high free carrier density at portions corresponding to respective high dopant impurity concentration regions of the carrier supply layer in the vicinity of a heterojunction interface. The heterojunction interface formed by the carrier channel layer and the carrier supply layer has a periodic undulating shape with convex portions and valley portions in stripe shapes extending parallel to the main current flow direction. A pseudo one-dimensional electron channel is formed in the vicinity of the high dopant impurity concentration region of the carrier supply layer whereby electron mobility is increased. The regions other than the high dopant impurity concentration regions of the carrier supply layer have a low dopant impurity concentration whereby the charge carrier quantity and output per unit chip area are increased, thereby increasing power output without increasing chip area.

REFERENCES:
"Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE", Journal of Crystal Growth 107 (1991), pp. 591-597, Karam et al.

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