Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-04-27
2008-08-12
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S280000, C257S282000, C257S283000, C438S570000
Reexamination Certificate
active
07411226
ABSTRACT:
An InP high electron mobility transistor (HEMT) structure in which a gate metal stack includes an additional thin layer of a refractory metal, such as molybdenum (Mo) or platinum (Pt) at a junction between the gate metal stack and a Schottky barrier layer in the HEMT structure. The refractory metal layer reduces or eliminates long-term degradation of the Schottky junction between the gate metal and the barrier layer, thereby dramatically improving long-term reliability of InP HEMTs, but without sacrifice in HEMT performance, whether used as a discrete device or in an integrated circuit.
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patent: 6555850 (2003-04-01), Sakamoto et al.
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patent: 2002/0030202 (2002-03-01), Liu et al.
Choug Yeong-Chang
Grundbacher Ronald
Lai Richard
Leung Denise L.
Liu Po-Hsin
Northrop Grumman Corporation
Rao Steven H
Tarolli, Sundheim Covell & Tummino LLP
Weiss Howard
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