High electron mobility transistor having improved electron contr

Details High electron mobility transistor having improved electron contr High electron mobility transistor having improved electron contr

1992-09-30

1995-05-02

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

257190, 257194, H01L 29812

Patent

active

054122309

ABSTRACT:
First and second high-resistivity compound semiconductor channel layers are formed between an undoped compound semiconductor layer and a doped compound semiconductor layer having an electron affinity smaller than the undoped compound semiconductor layer. The first high-resistivity compound semiconductor channel layer is adjacent to the doped compound semiconductor layer, and has an electron affinity distribution that increases toward the undoped compound semiconductor layer. The second high-resistivity compound semiconductor channel layer is located between the first high-resistivity compound semiconductor channel layer and the undoped compound semiconductor layer, and has an electron affinity distribution that decreases toward the undoped compound semiconductor layer. A gate electrode and cap layers are formed on the doped compound semiconductor layer. Source and drain electrodes are formed on the respective cap layers.

REFERENCES:
patent: 5099295 (1992-03-01), Ogawa
patent: 5206527 (1993-04-01), Kuwata

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