High electron mobility transistor and methode of making

Details High electron mobility transistor and methode of making High electron mobility transistor and methode of making

1991-10-10

1995-11-28

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257280, 257473, H01L 29161, H01L 29205, H01L 2948, H01L 2956

Patent

active

054710774

ABSTRACT:
A high electron mobility transistor (HEMT) includes a diffusion barrier (22) to prevent gate metal (20) diffusion into the substrate (12) during fabrication and a sacrificial platinum alloy layer (30) forms the Schottky barrier. A method of forming a HEMT includes forming a diffusion barrier of titanium nitride on a platinum layer and applying sufficient heat to cause the platinum layer to alloy with the gallium arsenide layer forming a platinum gallium and platinum arsenide alloy layer and Schottky barrier. Since all platinum is consumed, this method permits precise control of the thickness of the gate layer and eliminates diffusion of the platinum gate layer into the gallium arsenide layer during later processing steps.

REFERENCES:
patent: 4544238 (1985-10-01), Nickol
patent: 4721993 (1988-01-01), Walter
patent: 4865193 (1989-09-01), Shimamoto et al.
patent: 4947237 (1990-08-01), Fusaroli
patent: 5075763 (1991-12-01), Spitzer et al.
A. K. Sinha et al., n-GaAs Skhottky Diodes Metallized with Ti and Pt/Ti, Solid State Electronics, 1976, vol. 19, pp. 489-492.
N. Toyoda et al., An Applicaiton of Pt-GaAs Solid Phase Reaction to GaAs and Related Compounds, Gallium Arsenide and Related Compounds 1981, Inst. Phys. Conf. Ser. 63, Bristol and London, Institute of Physics, p. 521 (1982).

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