High electron mobility transistor

Details High electron mobility transistor High electron mobility transistor

1990-02-20

1993-12-14

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257 12, 257183, H01L 2980, H01L 29205

Patent

active

052707989

ABSTRACT:
A high-electron mobility transistor or HEMT has a top surface layer between its gate and drain arranged to produce a channel to drain conductance that is close to the ungated channel conductance to lower the output conductance and reduce gate leakage and gate capacitance. The transistor has a high band-gap active layer to produce a 2DEG channel in an adjacent layer, and source, gate and drain electrodes on the active layer. An undoped or lightly doped surface layer in the region between the gate and the drain produces a low conductance for a region of a few hundred .ANG. from the drain-side edge of the gate. This spreads the electric field domain over at least this few hundred .ANG. distance.

REFERENCES:
patent: 4916498 (1990-04-01), Berenz
"A High Aspect Ratio Design Approach to Millimeter-Wave HEMT Structures", M. B. Das, IEEE Trans. Electron Devices, ED-32(1), p. 11 (1985).
"DC and RF Performance of 0.1um Gate Length A1.sub.0.48 In.sub.0.52 As-Ga.sub.0.38 In.sub.0.62 As Pseudomorphic HEMTs" by U. K. Mishra, et al., IEEE IEDM-88 p. 180 (1988).
"Extremely High Gain, Low Noise in AlAs/InGaAs HEMTs Grown by Molecular Beam Epitaxy" by P. Ho, et al. IEEE IEDM-88 p. 184(1988).
"Ultra-High-Speed Digital Circuit Performance in 0.2-um Gate Length AlInAs/GaInAs HEMT Technology", U. K. Mishra, et al. 9 IEEE Electron Device Letters, No. 9, p. 482(1988).
"A Recessed Gate A1.sub.0.48 In.sub.0.52 As/Ga.sub.0.47 In.sub.0.53 As Modulation Doped Field Effect Transistor" T. Itoh, et al., paper presented at the Tenth Annual IEEE/Cornell Conf. on Advanced Concepts in High Speed Semicond. Dev. & Ckts. (1985).
"DC and Microwave Characteristics of InAlAs/InGaAs Single-Quantum-Well MODFET's with GaAs Gate Barriers", W. P. Hong, et al., 9 IEEE Electron Device Letters, No. 7, P. 352 (1988).
"HEMT Millimetre Wave Monolithic Amplifier on InP", M. Riaziat, et al., 25 Electronics Letters, No. 20, p. 1328 (1989).
"Two-Dimensional Simulation of Submicrometer GaAs MESFET's: Surface Effects and Optimization of Recessed Gate Structures", F. Heliodore, et al., 35 IEEE Transactions on Electron Devices, No. 7, p. 824 (1988).

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