1987-11-02
1990-09-18
James, Andrew J.
357 16, H01L 2980
Patent
active
049582038
ABSTRACT:
A high electron mobility transistor comprises a semiinsulating substrate, an undoped channel layer formed on the semiinsulating substrate and made of undoped gallium arsenide (GaAs), a doped carrier supplying layer formed on the undoped channel layer and made of a II-VI family compound semiconductor having an electron affinity smaller than that of the undoped gallium arsenide and having an energy gap greater than that of the undoped gallium arsenide, and source, drain and gate electrodes formed on the doped carrier supplying layer.
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Phillipp G. Kornreich et al., "Proposed Size-Effect High-Electron-Mobility Transistor," pp. 421-428, Solid-State Electronics, vol. 29, No. 4, Apr. 15, 1985, New York.
Hunihiko Kodama et al., "Two-Dimensional Electron Gas at GaAs/Ga.sub.0.52 In.sub.0.48 P Heterointerface Grown by Chloride Vapor-Phase Epitaxy," pp. L127-L129, Japanese Journal of Applied Physics, vol. 25, No. 2, Part 2, Feb. 25, 1986, Japan.
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Bowers Courtney A.
Fujitsu Limited
James Andrew J.
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