High electron mobility transistor

Details High electron mobility transistor High electron mobility transistor

1987-11-02

1990-09-18

James, Andrew J.

357 16, H01L 2980

Patent

active

049582038

ABSTRACT:
A high electron mobility transistor comprises a semiinsulating substrate, an undoped channel layer formed on the semiinsulating substrate and made of undoped gallium arsenide (GaAs), a doped carrier supplying layer formed on the undoped channel layer and made of a II-VI family compound semiconductor having an electron affinity smaller than that of the undoped gallium arsenide and having an energy gap greater than that of the undoped gallium arsenide, and source, drain and gate electrodes formed on the doped carrier supplying layer.

REFERENCES:
patent: 4705361 (1987-11-01), Frazier
patent: 4734750 (1988-03-01), Okamura
patent: 4745447 (1988-05-01), Chen
Sze, S. M. "Physics of Semiconductor Devices", 1981, John Wiley & Sons, New York, p. 848.
Y-D. Zheng, et al., "Observation of a Quasi-Two-Dimensional Electron Gas at an InSb/CdTe," pp. 1187-1189, Applied Physics Letters, Nov. 3, 1986, No. 18, New York.
R. G. Van Welzenis et al., "Band Bending at the InSb-CdTe Interface", pp. 1057-1063, Solid-State Electronics, vol. 28, No. 11, Nov. 28, 1985, New York.
Phillipp G. Kornreich et al., "Proposed Size-Effect High-Electron-Mobility Transistor," pp. 421-428, Solid-State Electronics, vol. 29, No. 4, Apr. 15, 1985, New York.
Hunihiko Kodama et al., "Two-Dimensional Electron Gas at GaAs/Ga.sub.0.52 In.sub.0.48 P Heterointerface Grown by Chloride Vapor-Phase Epitaxy," pp. L127-L129, Japanese Journal of Applied Physics, vol. 25, No. 2, Part 2, Feb. 25, 1986, Japan.
Hilmi Unlu et al., "Band Discontinuities as Heterojunction Device Design Parameters," pp. 616-619, IEEE Transactions on Electron Devices, vol. ED-33, No. 5, May, 1986.

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