High electron mobility transistor

Details High electron mobility transistor High electron mobility transistor

1994-04-20

1995-04-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257201, H01L 2980, H01L 29161

Patent

active

054060990

ABSTRACT:
A compound semiconductor device including a substrate; a first epitaxial layer formed on the substrate, the first epitaxial layer having an impurity concentration of 1.times.10.sup.15 .ltoreq.p.ltoreq.1.times.10.sup.16 (cm.sup.-3); and a second epitaxial layer formed on the first epitaxial layer for allowing travel of two-dimensional electrons, the second epitaxial layer having an impurity concentration of n.ltoreq.1.times.10.sup.14 (cm.sup.-3) and p.ltoreq.1.times.10.sup.14 (cm.sup.-3). With the device disclosed, it is difficult for a short channel effect due to a reduction in gate length to occur, thereby ensuring high characteristics of the compound semiconductor device.

REFERENCES:
patent: 4788156 (1988-11-01), Stoneham et al.
patent: 5028968 (1991-07-01), O'Loughlin et al.
Patent Abstracts of Japan, published Jul. 30, 1990, Hideo Toyoshima "Field Effect Transistor".
Patent Abstracts of Japan, published Jun. 7, 1988, Toshiyuki Usagawa et al, "Semiconductor Device".

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