1991-05-09
1992-08-18
Hille, Rolf
357 16, H01L 2980
Patent
active
051403862
ABSTRACT:
A high electron mobility transistor includes a pair of charge screen layers disposed over a first one of active and charge donor layers of the high electron mobility transistor. The pair of screen layers are patterned to provide a double recessed channel. A first charge screen layer disposed adjacent to the charge donor layer is etched to provide a recess having a first length between source and drain electrodes, whereas a second charge screen layer disposed over the first aforementioned charge screen layer, as well as, a portion of the aforementioned first charge screen layer are etched to provide a second, substantially longer length between source and drain electrodes. The gate electrode is provided in the first aforementioned recess in Schottky barrier contact with the charge donor layer.
REFERENCES:
patent: 4600932 (1986-07-01), Norris
patent: 4652896 (1987-03-01), Das et al.
patent: 4821093 (1989-04-01), Iafrate et al.
patent: 4916498 (1990-04-01), Berenz
patent: 5008717 (1991-04-01), Bar-Joseph et al.
IEEE Electron Device Letters, vol. 10, No. 10, Oct. 1989, "A 0.25-.mu.m Gate-Length Pseudomorphic HFET with 32-mW Output Power at 94 GHz", by Smith et al., pp. 437-439.
IEEE Electron Device Letters, vol. 11, No. 1, Jan. 1990, "W-Band Low-Noise In AlAs/InGaAs Lattice-Matched HEMT's", by Chao et al., pp. 59-62.
Huang John C.
Jackson Gordon S.
Hille Rolf
Loke Steven
Maloney Denis G.
Raytheon Company
Sharkansky Richard M.
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