High electron mobility transistor

Details High electron mobility transistor High electron mobility transistor

1992-06-05

1994-06-14

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257 29, H01L 2906, H01L 31072, H01L 31109

Patent

active

053212789

ABSTRACT:
A field-effect transistor (FET) in which an InGaAs layer formed on a GaAs substrate is formed in such a manner that the In composition ratio on the gate electrode side on the substrate surface is made small and the In composition ratio on the GaAs substrate side is made large. Thereby, the FET does not cause a decline in the mutual conductance in the FET and a decline in the noise figure (NF) even if negative voltage is applied to a gate electrode.

REFERENCES:
patent: 4827320 (1989-05-01), Morkoc et al.
patent: 5116774 (1992-05-01), Huang et al.
J. W. Matthews and A. E. Blakeslee, "Defects in Epitaxial Multilayers, I. Misfit Dislocations", Journal of Crystal Growth, vol. 27, 1974, pp. 118-125.

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