Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-06-30
2000-04-11
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257 66, 257192, 257194, 438482, H01L 31072
Patent
active
060490918
ABSTRACT:
There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of single crystal silicon having an electron affinity greater than that of the amorphous silicon hydride, formed on the amorphous semiconductor layer, (c) a gate insulating film formed on the semiconductor layer, and (d) a gate electrode formed on the gate insulating film. The amorphous semiconductor layer and the semiconductor layer cooperate with each other to thereby form a potential well at a junction therebetween. The above mentioned field effect transistor utilizes a difference in electron affinity between the amorphous semiconductor layer and the semiconductor layer to thereby make it possible to operate at a higher speed because carriers are not influenced by scattering of doped ions. In addition, the formation of a single crystal silicon layer on an amorphous silicon layer, which would be difficult to fabricate by epitaxial growth, can be accomplished by means of ion implantation, and can be operated in accordance with the operation principle of a conventional MOS transistor.
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Mintel William
NEC Corporation
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