High electron mobility transistor

Details High electron mobility transistor High electron mobility transistor

1997-08-21

1998-08-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257631, H01L 29201, H01L 29737

Patent

active

057961271

ABSTRACT:
A method of fabricating a semiconductor device includes forming a first mixed crystal semiconductor layer of AlAs and InAs; applying a solution containing a material easily combining with fluorine to the surface of the first mixed crystal semiconductor layer exposed to the atmosphere so that the material combines with fluorine that sticks to the surface of the first mixed crystal semiconductor layer; and annealing the first mixed crystal semiconductor layer in a vacuum. In this method, since the fluorine on the surface of the first mixed crystal semiconductor layer exposed to the atmosphere combines with the material included in the solution and is removed together with the material, a first mixed crystal semiconductor layer having no fluorine is produced. Therefore, unwanted infiltration of fluorine into the first mixed crystal semiconductor layer is avoided, resulting in a highly reliable semiconductor device with desired characteristics.

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patent: 5682045 (1997-10-01), Hayafuji et al.
Yoshida et al., "Surface Passivation of In.sub.0.52 Al.sub.0.48 As Using (NH.sub.4).sub.2 S.sub.x And P.sub.2 S.sub.5 / (NH.sub.4).sub.2 S", Japanese Journal of Applied Physics, vol. 33, 1994, pp. 1248-1251.
Leclercq et al., "Surface Chemistry Of InAlAs After (NH.sub.4).sub.2 S.sub.x Sulphidation", Semiconductor Science Technology, vol. 10, 1995, pp. 95-100.
Research Disclosure, "A Fluorine Cap For Be Outdiffusion in GaAs", Apr. 1992, No. 336, p. 308, Emsworth, GB.
Hayafuji et al., Thermal Stability of AllnAs/GalnAs/lnP heterostructures, Applied Physics Letters, Feb. 13, 1995, vol. 66, pp. 863-865.
Fujita et al., Novel HEMT Structures using a Strained lnGaP Schottky Layer, Fifth International Conference on IPRM, Apr. 19-22, 1993, pp. 497-500.

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