Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-08-07
2007-08-07
Dang, Trung (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29246, C257SE29248, C257SE29249
Reexamination Certificate
active
11073484
ABSTRACT:
A HEMT device including a GaN channel structure including a very thin (Al,In,Ga)N subchannel layer that is disposed between a first GaN channel layer and a second GaN channel layer, to effect band bending induced from the piezoelectric and spontaneous charges associated with the (Al,In,Ga)N subchannel layer. This GaN channel/(Al,In,Ga)N subchannel arrangement effectively disperses the 2DEG throughout the channel of the device, thereby rendering the device more linear in character (relative to a corresponding device lacking the subchannel (Al,In,Ga)N sub-layer), without substantial loss of electron mobility.
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Cree Inc.
Dang Trung
Gustafson Vincent K.
Intellectual Property / Technology Law
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