High electron mobility transistor

Details High electron mobility transistor High electron mobility transistor

1991-10-15

1992-09-01

Davie, James W.

357 16, H01L 2980

Patent

active

051443783

ABSTRACT:
A semiconductor device comprises a substrate, a channel layer provided on the substrate and formed of an undoped first semiconductor material containing indium arsenide, a two-dimensional electron gas formed in the channel layer as a substantially scatter-free path of electrons, an electron supplying layer provided on the channel layer to form a heterojunction interface with the channel layer, a source electrode provided on the electron supplying layer for injecting electrons, a drain electrode provided on the electron supplying layer for collecting electrons and a gate electrode provided on the electron supplying layer for controlling the passage of the electrons in the two-dimensional electron gas. The electron supplying layer comprises a second compound semiconductor material having a lattice constant matching to the channel layer and doped to the n-type to form the two-dimensional electron gas. The second compound semiconductor material has a valence band having an energy level higher than the conduction band of the channel layer at the heterojunction interface, and the second compound semiconductor material is doped to a concentration level such that the Fermi level is located between the valence band and the conduction band of the second compound semiconductor material forming the electron supplying layer.

REFERENCES:
patent: 5023675 (1991-06-01), Ishikawa
Yoh, et al., "An InAs Channel Heterojunction Field Effect Transitor with High Transconductance", IEEE Electron Device Letters, vol. II, No. 11 Nov. 1990, pp. 526-527.
Patent Abstracts of Japan, vol. 12, No. 196 (E-168) (3043), Jun. 7, 1988 and JP-A62-298 181.
Patent Abstracts of Japan, vol. 14, No. 568 (E-1014) (4511), Dec. 18, 1990 and JP-A-2 246 342.

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