High electron mobility heterojunction semiconductor devices

Details High electron mobility heterojunction semiconductor devices High electron mobility heterojunction semiconductor devices

1987-06-29

1988-03-29

Carroll, J.

357 22, 357 30, 357 51, 357 61, 357 83, H01L 2480, H01L 2714, H01L 29161, H01L 2504

Patent

active

047347503

ABSTRACT:
High electron mobility heterojunction semiconductor devices provided with a means to cause exposure of the electron source layer thereof to an electromagnetic wave allows modulation, adjustment and the like of the characteristics thereof even after completion of the production thereof, thus realizing a considerable magnitude of flexibility in the characteristics as well as considerably different modes in various embodiments, including field effect transistors which allow modulation of threshold voltage etc., connection channels or capacitors having a smaller resistance, programmable memory devices, image sensors. In addition, the high electron mobility heterojunction semiconductor devices can have a much higher operation speed than those available in the prior art.

REFERENCES:
patent: 3448348 (1969-06-01), Stadler
patent: 4119994 (1978-10-01), Jain et al.
patent: 4257055 (1981-03-01), Hess et al.
patent: 4295002 (1981-10-01), Chappell et al.
patent: 4323911 (1982-04-01), Campbell et al.
patent: 4354115 (1982-10-01), Warabisako et al.
patent: 4385309 (1983-05-01), Queisser et al.
patent: 4424525 (1984-01-01), Mimura
H. L. Stormer et al. "Two-Dimensional Electron Gas at Differentially Doped GaAs-A.sub.x Ga.sub.1-x As Heterojunction Interface", Journal of Vacuum Science and Technology, vol. 16, (1979), pp. 1517-1519.
Applied Physics Letters, vol. 33, No. 7, Oct. 1, 1978, New York, US, R. Dingle et al.: "Electron Mobilities in Modulation-Doped Semiconductor Heterojunction Superlattices:" pp. 665-667.
Japanese Journal of Applied Physics, vol. 19, No. 5, May 1980, (letters) Tokyo, JP T. Mimura et al.: "A New Field-Effect Transistor with Selectively Doped GaAs
-Al.sub.x GA.sub.1-x As Heterojunctions", pp. L225-L227.
Applied Physics Letters, vol. 37, No. 9, Nov. 1, 1980, New York, US, S. Hiyamizu et al.: "High Mobility of Two-Dimensional Electrons at the GaAs
-AlGaAs Heterojunction Interface", pp. 805-807.
Applied Physics Letters, vol. 37, No. 11, Dec. 1980, New York, US, L. C. Witkowski et al.: "High Mobilities in Al.sub.x Ga.sub.1-x As-GaAs Heterojunctions", pp. 1033-1035.
Electronics Letters, vol. 17, No. 10, May 14, 1981, London, GB, P. Delescluse et al.: "Transport Properties in GaAs-Al.sub.x Ga.sub.1-x As Heterostructures and MESFET Application", pp. 342-344.
IBM Technical Disclosure Bulletin, vol. 15, No. 4, Sep. 1972, pp. 1327-1328, New York, US, S. C. C. Tseng et al.: "Electroptical Memory with Write, Read and Erase Characteristics".
Solid State Communications, vol. 29, 1979, "Two-Dimensional Electron Gas at a Semiconductor-Semiconductor Interface", E. L. Stormer et al., pp. 705-709.

Affiliated with

Also associated with

Rating

High electron mobility heterojunction semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High electron mobility heterojunction semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High electron mobility heterojunction semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1092045