High electron mobility epitaxial substrate

Details High electron mobility epitaxial substrate High electron mobility epitaxial substrate

2007-11-06

2007-11-06

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257SE31053, C257SE33027, C257SE21403, C257SE21407, C438S172000

Reexamination Certificate

active

10540514

ABSTRACT:
A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer6and AlGaAs layers containing n-type impurities as back side and front side electron supplying layers3and9, wherein an emission peak wavelength from the strain channel layer6at 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer6.

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