High efficient silicon-on-lithium niobate modulator

Details High efficient silicon-on-lithium niobate modulator High efficient silicon-on-lithium niobate modulator

2011-06-28

2011-06-28

Healy, Brian M. (Department: 2883)

Optical waveguides

Temporal optical modulation within an optical waveguide

Electro-optic

C385S001000, C385S003000, C385S122000, C385S129000, C385S132000, C398S098000, C398S101000, C398S116000, C398S141000, C438S031000, C359S333000, C359S335000, C359S341310, C359S341320, C359S341500, C359S342000, C359S344000, C359S346000, C359S349000

Reexamination Certificate

active

07970241

ABSTRACT:
A modulator includes an electro-optical substrate and a first and second waveguide formed of a doped semiconductor material positioned on a surface of an electro-optical substrate forming a slot therebetween. A doping level of the semiconductor material being chosen to make the first and second waveguide conductive. A dielectric material is positioned in the slot which increases confinement of both an optical field and an electrical field inside the slot. A refractive index of the semiconductor material and a refractive index of the dielectric material positioned in the slot being chosen to reduce the Vπ·L product of the modulator.

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