High-efficiency thinned imager with reduced boron updiffusion

Details High-efficiency thinned imager with reduced boron updiffusion High-efficiency thinned imager with reduced boron updiffusion

2011-07-19

2011-07-19

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE21566, C257SE21100, C257S358000, C257S481000, C257S460000, C257S347000, C257S229000

Reexamination Certificate

active

07982277

ABSTRACT:
A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator wafer (UTSOI) is disclosed. The UTSOI wafer includes a mechanical substrate, an insulator layer, and a seed layer. At least one dopant is applied to the semiconductor substrate. A first portion of an epitaxial layer is grown on the seed layer. A predefined concentration of carbon impurities is introduced into the first portion of the epitaxial layer. A remaining portion of the epitaxial layer is grown. During the epitaxial growth process, the at least one dopant diffuses into the epitaxial layer such that, at completion of the growing of the epitaxial layer, there exists a net dopant concentration profile which has an initial maximum value at an interface between the seed layer and the insulator layer and which decreases monotonically with increasing distance from the interface within at least a portion of at least one of the semiconductor substrate and the epitaxial layer.

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