Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Patent
1997-11-26
1999-08-31
Chapman, Mark
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
136262, H01L 3100
Patent
active
059449136
ABSTRACT:
A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).
REFERENCES:
patent: 5689123 (1997-11-01), Major et al.
K.A. Bertness et al., "29.5%-Efficient GaInP/GaAs Tandem Solar Cells," Applied Physics Letters, vol. 65, pp. 989-991, Aug. 22, 1994.
P.K. Chiang et al., "Experimental Results of GaInP.sup.2 /GaAs/Ge Triple Junction Cell Development for Space Power Systems," Proceedings of the 25th IEEE Photovoltaic Specialists Conference, pp. 183-186, May 1996.
M. Kondow et al., "GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance," Japanese Journal of Applied Physics, vol. 35, pp. 1273-1275, 1996.
M. Meyer et al., "Flying High: The Commercial Satellite Industry Converts to Compound Semiconductor Solar Cells," Compound Semiconductor, pp. 22-24, Nov./Dec. 1996.
S. Sato et al., "Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition," Japanese Journal of Applied Physics, vol. 36, pp. 2671-2675, 1997.
Hou Hong Q.
Reinhardt Kitt C.
Chapman Mark
Hohimer John P.
Sandia Corporation
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