High efficiency solar cell

Details High efficiency solar cell High efficiency solar cell

1989-02-03

1990-04-10

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

437 5, 437 93, 437132, 357 30, H01L 3106, H01L 3118

Patent

active

049157442

ABSTRACT:
A gallium-arsenide solar cell has a germanium substrate cut at a special angle, with its surface generally perpendicular to the 001 axis, but tilted by about six to fifteen degrees toward the direction generally about half-way between the 011 and the 111 axial directions. To avoid the cascade effect the junction with the substrate may be passivated or photovoltaically inhibited by initiating vapor deposition of GaAs at a temperature below 700.degree. C. and rapidly ramping the temperature up to normal vapor deposition temperatures. Poisoning of the GaAs layer by germanium may be prevented inexpensively by using a silicon dioxide coating on one side of the germanium substrate.

REFERENCES:
patent: 4227941 (1980-10-01), Bozler et al.
S. P. Tobin et al., Conference Record, 18th IEEE Photovoltaic Specialists Conf., (1985), pp. 134-139.
K. I. Chang et al., Conference Record, 19th IEEE Photovoltaic Specialists Conf., (1987), pp. 273-279.
J. H. Bullock, IEEE Trans. Electron Dev., vol. 36, pp. 1238-1243, (1989).
M. Kato et al., Conference Record, 18th IEEE Photovoltaic Specialists Conference, (1985), pp. 14-19.
S. Tobin et al., IEEE Electron Device Letters, vol. 9, pp. 256-258, (1988).
Y. Yeh et al., "High Volume Production of Rugged, High Efficiency GaAs/Ge Solar Cells", 20th IEEE Photovoltaic Specialists Conf., (1988).
R. E. Hart, Jr. et al., "High Altitude Current-Voltage Measurement of GaAs/Ge Solar Cells", 20th IEEE Photovoltaic Specialist Conference, (1988).

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