High efficiency silicon solar cells and method of fabrication

Details High efficiency silicon solar cells and method of fabrication High efficiency silicon solar cells and method of fabrication

1991-09-13

1993-11-02

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136261, 437 2, H01L 3106, H01L 3118

Patent

active

052580776

ABSTRACT:
A very inexpensive, uncomplicated, and high throughput manufacturing process for fabrication of high efficiency silicon solar cells is disclosed. The manufacturing process begins with a low resistivity Czochralski wafer. Then the wafer's front surface is texturized and a lightly doped N type junction is formed in the front surface. Next, silicon dioxide is thermally grown on the wafer's front and back surfaces. Then a computer driven laser beam cuts the front surface oxide to form the grooves needed for the fabrication of the topside electrical contacts. The next step is to diffuse phosphorus deeply in the silicon under the groove areas, where the oxide has been eliminated by the laser beam. Thereafter, electroless plating of gold, nickel and copper in the groove areas is performed to form the topside ohmic contacts. Subsequently, junction edges at the wafer edges are plasma etched to remove any electrical shunts. Finally, rear ohmic contacts are screen printed and sintered.

REFERENCES:
patent: 3015590 (1962-01-01), Fuller
patent: 4158591 (1979-06-01), Avery et al.
patent: 4726850 (1988-02-01), Wenham et al.
C. M. Chong et al, Appl. Phys. Lett., vol. 52, No. 5, Feb. 1988, pp. 407-409.
M. A. Green et al, Conference Record, 20th IEEE Photovoltaic Specialists Conference (1988), pp. 411-414.

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