Patent
1976-02-04
1977-12-20
Edlow, Martin H.
357 30, 357 2, 357 4, 357 11, H01L 29161, H01L 2714
Patent
active
040645223
ABSTRACT:
A photocell includes a metallic base electrode, a continuous, crystalline P-type semiconductive selenium layer less than about 50 microns thick, a thin tellurium layer interposed therebetween to metallurgically bond the base electrode to the selenium layer and to form an ohmic contact between the base electrode and the selenium layer, a thin N-type semiconductive cadmium selenide layer contiguous with the selenium layer and forming a photovoltaic heterojunction therebetween, a pellucid layer of at least one cadmium chalcogenide contiguous with the cadmium selenide layer and forming an ohmic contact therewith and a current collecting electrode on the cadmium chalcogenide layer. The sunlight conversion efficiency of the cell is at least about 3.0%. The efficiency can be further improved by doping the selenium layer to improve its conductivity and by providing an N-type layer of cadmium selenide and N.sup.+ cadmium oxide. This can be done by continuously varying the oxygen content of the N-type layer. It is further helpful if a counterelectrode in the form of a grid is added, which minimizes both the resistance between the grid members in the cadmium layer and the blockage of light by the grid.
REFERENCES:
patent: 3556787 (1971-01-01), Letter
patent: 3622712 (1971-11-01), Moore
patent: 3922774 (1975-12-01), Lindmayer
patent: 3966512 (1976-06-01), Nonaka
Ghosh Amal K.
Shaw Robert F.
Dvorak Joseph J.
Edlow Martin H.
Exxon Research & Engineering Co.
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