Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1991-07-16
1992-10-27
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330302, H03F 360
Patent
active
051592878
ABSTRACT:
A high efficiency RF power amplifier includes a field effect transistor having a grounded source, a gate receiving an input signal, and a drain. A first inductor has a first end coupled to the drain via a lead inductance, and a second end through which an amplified output signal is output. A first capacitor has a first end grounded and a second end coupled to the second end of the first inductor. A second inductor has a first end receiving a drain bias voltage and a second end coupled to the second end of the first inductor. The second inductor is formed of a distributed-constant element. The first capacitor and the second inductor form a parallel resonant circuit coupled to the drain at a fundamental operating frequency of the high efficiency RF power amplifier, so that the drain is set to a high-impedance state. The first inductor, the first capacitor and the lead inductance form a serial resonant circuit coupled to the drain at a second harmonic of the fundamental operating frequency, so that the drain is set to a low-impedance state.
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Furutani Nagahisa
Imai Isao
Matsumoto Kazuhiro
Fujitsu Limited
Fujitsu Yamanashi Electronics Limited
Mottola Steven
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