High efficiency RF power amplifier

Amplifiers – With semiconductor amplifying device – Including class d amplifier

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330277, 330286, H03F 3217, H03F 360

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047178841

ABSTRACT:
A high efficiency RF power amplifier is disclosed in which a field effect transistor is operated in a class F mode. A third harmonic quarterwave open circuit transmission line stub having a Z.sub.O adjusted to provide capacitance series resonant with transistor inductance at the second harmonic is coupled to the transistor output lead to produce a low impedance at the channel drain of the transistor. Parallel resonance of the transistor die capacitance and interconnect inductance coupled to ground by the transmission line produces a third harmonic high impedance at the channel drain. Further lowpass output matching circuitry provides a constantly increasing impedance magnitude from the transistor die to the load and provides load mismatch isolation to the second and third harmonic impedances at the channel drain.

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