High efficiency rectifier

Details High efficiency rectifier High efficiency rectifier

2007-03-09

2010-12-07

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Having only two terminals and no control electrode , e.g.,...

C257S155000, C257S156000, C257SE29110, C257SE29325

Reexamination Certificate

active

07847315

ABSTRACT:
A high-efficiency power semiconductor rectifier device (10) comprising a δP++ layer (12), a P-body (14), an N-drift region (16), an N+ substrate (18), an anode (20), and a cathode (22). The method of fabricating the device (10) comprises the steps of depositing the N-drift region (16) on the N+ substrate (18), implanting boron into the N-drift region (16) to create a P-body region (14), forming a layer of titanium silicide (56) on the P-body region (14), and concentrating a portion of the implanted boron at the interface region between the layer of titanium silicide (56) and the P-body region (14) to create the δP++ layer (12) of supersaturated P-doped silicon.

REFERENCES:
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patent: 5182222 (1993-01-01), Malhi et al.
patent: 5818084 (1998-10-01), Williams
patent: 6979861 (2005-12-01), Rudov
patent: 7417266 (2008-08-01), Li et al.
S. P. Murarka “Silicide for VLSI Applications” by Academic Press, 1983, p. 167.

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