High efficiency power amplifier using HITFET driver circuit

Amplifiers – With semiconductor amplifying device – Including class d amplifier

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Details

330277, 330307, 333217, H03F 3217, H03F 316

Patent

active

059399414

ABSTRACT:
A high efficiency power amplifier includes an integrated circuit with a heterojunction interband tunneling field effect transistor (HITFET) amplifier coupled to receive high frequency (into the GHz) RF signals. The HITFET amplifier is constructed to receive the RF signal with a given frequency at the input terminal and to produce a substantially square wave signal at the given frequency at an output terminal in response to the RF signal applied to the input terminal. The gate of a switching FET connected as a class E amplifier is coupled to the output of the HITFET for receiving the square wave signal and an impedance matching output circuit is coupled to the drain of the switching FET.

REFERENCES:
patent: 3919656 (1975-11-01), Sokal et al.
patent: 4338582 (1982-07-01), Presser
patent: 5708398 (1998-01-01), Shen et al.

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