High efficiency photovoltaic device

Details High efficiency photovoltaic device High efficiency photovoltaic device

1996-10-16

1999-11-02

Chapman, Mark

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136255, 136258, H01L 2500

Patent

active

059774762

ABSTRACT:
An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

REFERENCES:
patent: 4600801 (1986-07-01), Guha et al.
patent: 4609771 (1986-09-01), Guha et al.
patent: 4773942 (1988-09-01), Hamakawa et al.
patent: 5298086 (1994-03-01), Guha et al.
patent: 5730808 (1998-03-01), Yang et al.

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