Coating processes – Coating by vapor – gas – or smoke
Patent
1994-05-02
1995-02-28
Beck, Schrive
Coating processes
Coating by vapor, gas, or smoke
4272552, C23C 1600
Patent
active
053935640
ABSTRACT:
The invention is a method directed to the use of a nonvolatile precursor, either a solid precursor or a liquid precursor, suitable for chemical vapor deposition (CVD), including liquid source CVD (LSCVD), of a semiconductor film. Using the method of the invention the nonvolatile precursor is dissolved in a solvent. The choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature and that can be liquified by a combination of pressure and cooling. The solution thus formed is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. In CVD the solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the nonvolatile precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited as a thin film on a semiconductor wafer. In LSCVD the liquid enters the chamber, contacts the wafer, evaporates, produces a product which is deposited as a thin film on the wafer surface.
REFERENCES:
patent: 4906493 (1990-03-01), Laine
patent: 4993361 (1991-02-01), Unvala
Sandhu Gurtej S.
Westmoreland Donald L.
Beck Schrive
Collier Susan B.
Maiorana David M.
Micron Semiconductor Inc.
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