Coating processes – Coating by vapor – gas – or smoke
Reexamination Certificate
2007-02-27
2007-02-27
Chen, Bret (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
C427S250000, C427S252000, C427S255280, C427S255310, C427S421100
Reexamination Certificate
active
10213030
ABSTRACT:
A method directed to the use of a nonvolatile precursor, either a solid or liquid precursor, suitable for CVD, including liquid source CVD (LSCVD). Using the method of the invention the nonvolatile precursor is dissolved in a solvent. Choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature, which can be liquified by combination of pressure and cooling. The solution is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. The solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the nonvolatile precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited on a semiconductor wafer. In LSCVD the liquid enters the chamber, contacts the wafer, evaporates, produces a product which is deposited as a thin film.
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Sandhu Gurtej S.
Westmoreland Donald L.
Chen Bret
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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