High efficiency low cost thin film silicon solar cell design and

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

136258, H01L 2100, E03B 1100, F17D 100

Patent

active

058973311

ABSTRACT:
A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

REFERENCES:
patent: 2802759 (1957-08-01), Moles
patent: 4180618 (1979-12-01), Alpha et al.
patent: 4321104 (1982-03-01), Hasegawa et al.
patent: 4335362 (1982-06-01), Salathe et al.
patent: 4359486 (1982-11-01), Patalong et al.
patent: 4525221 (1985-06-01), Wu
patent: 4566177 (1986-01-01), Van de Ven et al.
patent: 4781766 (1988-11-01), Barnett et al.
patent: 5166095 (1992-11-01), Hwang
patent: 5175125 (1992-12-01), Wong
patent: 5223453 (1993-06-01), Sopori
patent: 5358574 (1994-10-01), Sopori
patent: 5429985 (1995-07-01), Sopori
patent: 5431741 (1995-07-01), Sakaguchi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High efficiency low cost thin film silicon solar cell design and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High efficiency low cost thin film silicon solar cell design and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High efficiency low cost thin film silicon solar cell design and will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-680822

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.