Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Reexamination Certificate
2006-05-16
2006-05-16
Tra, Quan (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
Reexamination Certificate
active
07046076
ABSTRACT:
The present invention features use of PMOS devices to realize switches of an integrated circuit charge pump, while maintaining a maximum voltage drop (lower than VDD) on each transistor. The charge pump includes a pumping capacitor connected to a pumping node, a first PMOS device connected to an input node, a second PMOS device connected to an output node, a third PMOS device electrically communicating with the first PMOS device, and an auxiliary capacitor connected to the first PMOS device. The first PMOS device is configured to connect the pumping node to the input node when the pumping capacitor is not boosted. The second PMOS device is configured to transfer electrical current from the pumping node to the output node when the pumping capacitor is not boosted.
REFERENCES:
patent: 4581546 (1986-04-01), Allan
patent: 5196996 (1993-03-01), Oh
patent: 5352936 (1994-10-01), Allen
patent: 5546296 (1996-08-01), Savignac et al.
patent: 5818289 (1998-10-01), Chevallier et al.
patent: 5874850 (1999-02-01), Pulvirenti et al.
patent: 5889428 (1999-03-01), Young
patent: 6130574 (2000-10-01), Bloch et al.
patent: 6163487 (2000-12-01), Ghilardelli
patent: 6166585 (2000-12-01), Bazzani
patent: 6353356 (2002-03-01), Liu
patent: 6429723 (2002-08-01), Hastings
patent: 6437637 (2002-08-01), Myono
patent: 6448841 (2002-09-01), Milazzo
patent: 6466079 (2002-10-01), Kushnarenko
patent: 6515535 (2003-02-01), Myono
patent: 6677806 (2004-01-01), Bloch
patent: 6734717 (2004-05-01), Min
patent: 2002/0114199 (2002-08-01), Negoi
patent: 2002/0122324 (2002-09-01), Kim et al.
patent: 2002/0125935 (2002-09-01), Sawada et al.
patent: 2002/0190780 (2002-12-01), Bloch
patent: 2004/0104761 (2004-06-01), Yen
Article entitled “A New High Efficiency CMOS Voltage Doubler” by Pierre Favrat et al., Swiss Federal Institute of Technology Electronics Labs EL-LEG, Ecublens, CH-1015 Lausanne, Switzerland and Mead Microelectronics Engineering Applications and Design SA, Venoge 7, CH-1025 St. Sulpice, Switzerland, IEEE 1997 Custom Integrated Circuits Conference, pp. 259-262 (0-7803-3669-0).
S-C Lee et al.,A Low-Ripple Switched-Capacitor DC—DC up Converter for Low-Voltage Applications, IEICE Transactions on Elect.,Instit. Electronics Information and Comm. Eng., Aug. 2001, vol. E84-C, No. 8, pp. 1100-1103, XP001107649, ISSN 0916-8524.
K-S Min et al.,CMOS Charge Pumps Using Cross-Coupled charge Transfer Switches with Improved Voltage Pumping Gain and Low Gate-Oxide Stress for Low-Voltage Memory Circuits, IEICE Transactions on Electron.,Instit. Electronics Information and Comm. Eng., Jan. 2002, vol. E85-C, No. 1, Jan. 2002, XP001116786,ISSN 0916-8524.
Hongchin Lin et al., “New Four-Phase Generation Circuits for Low-Voltage Charge Pumps”, IEEE, 2001, pp. 504-507.
Daga Jean-Michel
Racape Emmanuel
Atmel Corporation
Schneck Thomas
Schneck & Schneck
Tra Quan
LandOfFree
High efficiency, low cost, charge pump circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High efficiency, low cost, charge pump circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High efficiency, low cost, charge pump circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3602338