Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-01-04
2011-01-04
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257SE31126, C257SE33064, C438S046000, C438S609000, C977S811000
Reexamination Certificate
active
07863608
ABSTRACT:
The present invention discloses a high-efficiency lighting device and a method for fabricating the same. The method of the present invention comprises steps: providing an insulation substrate and sequentially forming an electrode layer and a seed layer on the insulation layer; forming a plurality of zinc oxide micro and nano structures and a plurality of first insulation units on the seed layer, wherein each zinc oxide micro and nano structure is arranged between two neighboring first insulation units; forming a nitride layer on the side wall of each zinc oxide micro and nano structure; and forming an electrode layer on each nitride layer. The present invention achieves a high-efficiency lighting device via growing nitride layers on the side walls of zinc oxide micro and nano structures. Further, the present invention can reduce the fabrication cost.
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Chao Cha-Hsin
Lin Ching-Fuh
Coleman W. David
National Taiwan University
Rosenberg , Klein & Lee
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