Fishing – trapping – and vermin destroying
Patent
1991-06-05
1993-05-11
Fourson, George
Fishing, trapping, and vermin destroying
437126, 437174, 148DIG46, 148DIG113, 148DIG148, H01L 21205
Patent
active
052100510
ABSTRACT:
The invention is a method of growing intrinsic, substantially undoped single crystal gallium nitride with a donor concentration of 7.times.10.sup.17 cm.sup.-3 or less. The method comprises introducing a source of nitrogen into a reaction chamber containing a growth surface while introducing a source of gallium into the same reaction chamber and while directing nitrogen atoms and gallium atoms to a growth surface upon which gallium nitride will grow. The method further comprises concurrently maintaining the growth surface at a temperature high enough to provide sufficient surface mobility to the gallium and nitrogen atoms that strike the growth surface to reach and move into proper lattice sites, thereby establishing good crystallinity, to establish an effective sticking coefficient, and to thereby grow an epitaxial layer of gallium nitride on the growth surface, but low enough for the partial pressure of nitrogen species in the reaction chamber to approach the equilibrium vapor pressure of those nitrogen species over gallium nitride under the other ambient conditions of the chamber to thereby minimize the loss of nitrogen from the gallium nitride and the nitrogen vacancies in the resulting epitaxial layer.
REFERENCES:
patent: 4396929 (1983-08-01), Ohki et al.
patent: 4608581 (1986-08-01), Bagratishvici et al.
Sasaki, T., "substrate-polarity . . . on SiC", J. Appl. Phys., Nov. 1988 pp. 4531-4535.
Davis, R., "Critical Evaluation . . . Carbide", Mat. Science & Engineering, 1988, pp. 77-104.
Yoshida, S., "Epitaxial Growth . . . Heterostructures", J. Vac. Sci & Tech., Apr. 6, 1983; pp. 250-253.
Amano, H., "Metalorganic Vapor . . . Layer", Appl. Phys. Lett., Feb. 1986, pp. 353-355.
Sitar, Z., "Growth of AW/GAN . . . Epitaxy" J. Vac. Sci. Tech. B 8(2) Mar./Apr. 1990 pp. 316-322.
Amano, H., "UV and Blue . . . Irradiation", Preceedings of SPIE-The International Society for Optical Engineering, vol. 1361, Part 1, pp. 138-149 (1991).
Zensutsu, S. "Growth of GaN . . . Epitaxy" Appl. Phys. Lett. 48(13), Mar. 1986, pp. 870-872.
Paisley, M., "Growth of Cubic . . . Epitaxy", J. Vac. Sci Tech., May 6, 1989, pp. 701-705.
Chu T., "Galluim Nitride Films", J. Electrochemical Society, Jul. 1971, pp. 1200-1203.
Cree Research Inc.
Fourson George
LandOfFree
High efficiency light emitting diodes from bipolar gallium nitri does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High efficiency light emitting diodes from bipolar gallium nitri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High efficiency light emitting diodes from bipolar gallium nitri will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1349862