Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1997-04-18
2000-05-02
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 98, 257 99, 257103, H01L 3300
Patent
active
06057562&
ABSTRACT:
A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate on a first electrode, a first cladding layer of a first conductivity type on the substrate, an active layer on the first cladding layer, a second cladding layer of a second conductivity type on the active layer, a window layer of the second conductivity type on the second cladding layer, wherein the electrical resistivity of the window layer is less than that of the second cladding layer, a contact layer of the second conductivity type on the window layer for providing ohmic contact, and a conductive transparent oxide layer on the contact layer, wherein the electrical resistivity of the conductive transparent oxide layer is less than that of the window layer and the contact layer.
REFERENCES:
patent: Re35665 (1997-11-01), Lin et al.
patent: 5048035 (1991-09-01), Sugawara et al.
patent: 5661742 (1997-08-01), Huang et al.
Jou Ming-Jiunn
Lee Biing-Jye
Shyu Chiung-Sheng
Tarn Jacob C.
Epistar Corp.
Lin H. C.
Tran Minh-Loan
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