Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-03-22
2005-03-22
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S098000, C438S091000
Reexamination Certificate
active
06869820
ABSTRACT:
A high efficiency light emitting diode (LED) with metal reflector and the method of making the same is disclosed. The metal reflector is composed of at least two layers with one transparent conductive layer and the other highly reflective metal layer. The transparent conductive layer allows most of the light passing through without absorption and then reflected back by the highly reflective metal layer. The transparent conductive layer is selected from one of the materials that have very little reaction with highly reflective metal layer even in high temperature to avoid the reflectivity degradation during the chip processing. With this at least two layer metal reflector structure, the light emitting diode with vertical current injection can be fabricated with very high yield.
REFERENCES:
patent: 6448102 (2002-09-01), Kneissl et al.
patent: 6468824 (2002-10-01), Chen et al.
patent: 6562648 (2003-05-01), Wong et al.
patent: 6607931 (2003-08-01), Streubel
patent: 6649437 (2003-11-01), Yang et al.
patent: 20010004534 (2001-06-01), Carter-Coman et al.
patent: 20020093023 (2002-07-01), Camras et al.
patent: 20030003613 (2003-01-01), Hseich et al.
Mulpuri Savitri
Troxell Law Office PLLC
United Epitaxy Co., Ltd.
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