Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-03-19
2010-10-12
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S023000, C438S024000, C438S029000, C257SE33032, C257SE33068
Reexamination Certificate
active
07811838
ABSTRACT:
A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer and a second contact metal layer respectively deposed on two opposite surfaces of the permanent substrate; a bonding layer deposed on the second contact metal layer; a diffusion barrier layer deposed on the bonding layer, wherein the permanent substrate, the bonding layer and the diffusion barrier layer are electrically conductive; a reflective metal layer deposed on the diffusion barrier layer; a transparent conductive oxide layer deposed on the reflective metal layer; an illuminant epitaxial structure deposed on the transparent conductive oxide layer, wherein the illuminant epitaxial structure includes a first surface and a second surface opposite to the first surface; and a second conductivity type compound electrode pad deposed on the second surface of the illuminant epitaxial structure.
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Epistar Corporation
Hsu Winston
Margo Scott
Sefer A.
Teng Min-Lee
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