High efficiency intersubband semiconductor lasers

Details High efficiency intersubband semiconductor lasers High efficiency intersubband semiconductor lasers

2006-03-10

2008-07-22

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C977S951000

Reexamination Certificate

active

07403552

ABSTRACT:
An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.

REFERENCES:
patent: 4023993 (1977-05-01), Scifres et al.
patent: 4745607 (1988-05-01), Koch
patent: 4796274 (1989-01-01), Akiba et al.
patent: 4817110 (1989-03-01), Tokuda et al.
patent: 4847844 (1989-07-01), Noda et al.
patent: 4860298 (1989-08-01), Botez et al.
patent: 4894835 (1990-01-01), Uomi et al.
patent: 4958357 (1990-09-01), Kinoshita
patent: 4975923 (1990-12-01), Buus et al.
patent: 4985897 (1991-01-01), Botez et al.
patent: 5036522 (1991-07-01), Tanguy et al.
patent: 5052016 (1991-09-01), Mahbobzadeh et al.
patent: 5086430 (1992-02-01), Kapon et al.
patent: 5101413 (1992-03-01), Botez
patent: 5159604 (1992-10-01), Mehuys et al.
patent: 5170405 (1992-12-01), Connolly et al.
patent: 5208824 (1993-05-01), Tsang
patent: 5222090 (1993-06-01), Serreze
patent: 5241556 (1993-08-01), Macomber et al.
patent: 5255278 (1993-10-01), Yamanaka
patent: 5263041 (1993-11-01), Pankove
patent: 5272711 (1993-12-01), Mawst et al.
patent: 5272714 (1993-12-01), Chen et al.
patent: 5295150 (1994-03-01), Vangieson et al.
patent: 5323405 (1994-06-01), Kamiyama et al.
patent: 5329542 (1994-07-01), Westbrook
patent: 5345466 (1994-09-01), Macomber
patent: 5347533 (1994-09-01), Higashi et al.
patent: 5383211 (1995-01-01), Van de Walle et al.
patent: 5389396 (1995-02-01), Razeghi
patent: 5432812 (1995-07-01), Kurobe et al.
patent: 5436194 (1995-07-01), Kondo et al.
patent: 5452318 (1995-09-01), Makino et al.
patent: 5536085 (1996-07-01), Li et al.
patent: 5606570 (1997-02-01), Botez et al.
patent: 5727013 (1998-03-01), Botez et al.
patent: 5734670 (1998-03-01), Ono et al.
patent: 5793787 (1998-08-01), Meyer et al.
patent: 5818860 (1998-10-01), Garbuzov et al.
patent: 5889805 (1999-03-01), Botez et al.
patent: 5953356 (1999-09-01), Botez et al.
patent: 6023482 (2000-02-01), Capasso et al.
patent: 6028874 (2000-02-01), Wada et al.
patent: 6028875 (2000-02-01), Knight et al.
patent: 6127691 (2000-10-01), Fukunaga et al.
patent: 6167073 (2000-12-01), Botez et al.
patent: 6195381 (2001-02-01), Botez et al.
patent: 6219365 (2001-04-01), Mawst et al.
patent: 6256330 (2001-07-01), LaComb
patent: 6298077 (2001-10-01), He
patent: 6324199 (2001-11-01), Capasso et al.
patent: 6330265 (2001-12-01), Kinoshita
patent: 6363092 (2002-03-01), Botez et al.
patent: 6396865 (2002-05-01), Mawst et al.
patent: 6621842 (2003-09-01), Dapkus
patent: 6791104 (2004-09-01), Tansu et al.
patent: 6810053 (2004-10-01), Botez et al.
patent: 6849866 (2005-02-01), Taylor
patent: 6907056 (2005-06-01), Botez
patent: 2004/0061102 (2004-04-01), Tansu
patent: 2004/0136426 (2004-07-01), Widjaja et al.
patent: 2004/0233954 (2004-11-01), Hayakawa
patent: 2005/0173694 (2005-08-01), Mawst et al.
patent: 2005/0226296 (2005-10-01), Botez et al.
patent: WO 96/08062 (1996-03-01), None
patent: WO 01/29943 (2001-04-01), None
Sirtori et al., “Low-loss AI-free waveguides for unipolar semiconductor lasers,” Applied Physics Letters, vol. 75, p. 3911, 1999.
H. Kogelnik, et al., “Coupled-Wave Theory of Distributed Feedback Lasers,” J. Appl. Phys., vol. 43, No. 5, May 1972, pp. 2327-2335.
H. C. Casey, Jr., “Temperature dependence of threshold current density on InP-Ga0.28In0.72As0.6P0.4(1.3 μm) double heterostructures lasers,” J. Appl. Phys., vol. 56 (7), 1984, pp. 1959-1964.
C.H. Henry, et al., “Observation of Destructive Interference in the Radiation Loss of Second-Order Distributed Feedback Lasers,” IEEE J. of Quantum Electronics, vol. QE-21, No. 2, Feb. 1985, pp. 151-153.
G. Ji, et al., “Band Lineup in GaAs1-xSbx/GaAs Strained-Layer Multiple Quantum Wells Grown by Molecular-Beam Epitaxy,” Physical Review B, vol. 38, No. 15, Nov. 15, 1988, pp. 10571-10577.
C.G. Van De Walle, “Band Lineups and Deformation Potentials in the Model-Solid Theory,” Physical Review B., vol. 39, No. 3, Jan. 15, 1989, pp. 1871-1883.
D. Botez, et al., “Resonant Optical Transmission and Coupling in Phase-Locke Waveguide Array,” Appl. Phys. Lett. 54(22), May 29, 1989, pp. 2183-2185.
D. Botez, et al., “Diffraction-Limited In-Phase-Mode Operation from Uniform Array of Antiguides with Enhanced Interelement Loss,” Elec. Lett. 25(19), Sep. 14, 1989, pp. 1282-1283.
D. Ahn, et al., “Optical Gain and Gain Suppression of Quantum-Well Lasers with Valence Band Mixing,” IEEE Journal of Quantum Electronics, vol. 26, No. 1, Jan. 1990, pp. 13-24.
D. Boetz, et al., “Phase-Locked Arrays of Antiguides: Modal Content and Discrimination,” IEEE J. of Quantum Electronics, vol. 26, No. 3, Mar. 1990, pp. 482-495.
J. Kinoshita, “Axial Profile of Grating Coupled Radiation from Second-Order DFB Lasers with Phase Shifts,” IEEE Journal of Quantum Electronics, vol. 26, No. 3, Mar. 1990, pp. 407-412.
S. H. Macomber, “Nonlinear Analysis of Surface-Emitting Distributed Feedback Lasers,” IEEE Journal of Quantum Electronics, vol. 26, No. 12, Dec. 1990, pp. 2065-2074.
N.W. Carlson, et al., “Mode Discrimination in Distributed Feedback Grating Surface Emitting Lasers Containing a Buried Second-Order Grating,” IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, pp. 1746-1752.
D. Botez, “High-Power Monolithic Phase-Locked Arrays of Antiguided Semiconductor Diode Lasers,” IEEE Proc.-J., vol. 139, No. 1, Feb. 1992, pp. 14-23.
K. David, et al., “Basic Analysis of AR-Coated, Partly Gain-Coupled DFB Lasers: The Standing Wave Effect,” IEEE J. of Quantum Electronics, vol. QE-28, No. 2, Feb. 1992, pp. 427-433.
S. Kawanaka, et al., “Strained Single Quantum Well AlGalnP Laser Diodes with an Asymmetric Waveguiding Layer,” International Conference on Solid State Devices and Materials, Aug. 1, 1992, pp. 240-242.
Mawst, L.J., et al., “Design Optimization of ARROW-Type Diode Lasers,” IEEE Photonics Technology Letters, vol. 4, No. 11, Nov. 1992, pp. 1204-1206.
S. F. Yu, et al., “Effect of External Reflectors on Radiation Profile of Grating Coupled Surface Emitting Lasers,” IEE Proceedings J. Optoelectronics, GB, Institution of Electrical Engineers, Stevenage, vol. 140, No. 1, Feb. 1, 1993, pp. 30-38.
Y. Zou, et al., “Experimental Study of Auger Recombination, Gain, and Temperature Sensitivity of 1.5 μm Compressively Strained Semiconductor Lasers,” IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1565-1575.
R.G. Baets, et al., “On the Distinctive Features of Gain Coupled DFB Lasers and DFB Lasers with Second Order Grating,” IEEE J. of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1792-1798.
D. Mehuys, et al., “5.25-W CW Near-Diffraction-Limited Tapered-Stripe Semiconductor Optical Amplifier,” IEEE Photonics Technology Letters, vol. 5, No. 10, Oct. 1993, pp. 1179-1182.
D. Botez, et al., “Flat-Phasefront Fanout-Type Power Amplifier Employing Resonant-Optical-Waveguide Structures,” Appl. Phys. Lett., vol. 63, No. 23, Dec. 6, 1993, pp. 3113-3115.
S. Ramanujan, et al., “Temporal Behavior of Resonant-Optical-Waveguide Phase-Locked Diode Laser Arrays,” Appl. Phys. Lett., vol. 64, No. 7, Feb. 1994, pp. 827-829.
T. Namegaya, et al., “Effects of Well Number in 1.3 μm GaInAs/InP GRIN-SCH Strained-Layer Q

Affiliated with

Also associated with

Rating

High efficiency intersubband semiconductor lasers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High efficiency intersubband semiconductor lasers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High efficiency intersubband semiconductor lasers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3965463