High efficiency homogeneous chemical vapor deposition

Details High efficiency homogeneous chemical vapor deposition High efficiency homogeneous chemical vapor deposition

1984-06-29

1986-06-03

Childs, Sadie L.

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272552, 4272553, C23C 1600, C23C 1630

Patent

active

045929335

ABSTRACT:
A technique and apparatus for homogeneous chemical vapor deposition (HCVD), wherein a heated carrier gas is mixed with a source gas in a location close to a substrate on which deposition is to occur. The heated carrier gas transfers heat to the source gas in order to decompose it, producing the intermediate species necessary for deposition onto the substrate. Thus, the source gas is not subjected to heating above its pyrolysis temperature prior to being transported to the immediate vicinity of the substrate. This HCVD apparatus includes a heat source for heating the carrier gas, a tube for bringing the heated carrier gas to a location close to the substrate, and another tube for bringing the reactive source gas to the aforementioned location where it is mixed with the hot carrier gas to cause decomposition of the source gas close to the substrate. The substrate temperature is decoupled from the hot gas temperature and is significantly colder than the hot gas temperature. Simultaneous deposition onto a plurality of substrates is possible, and the system can be scaled-up to provide deposition over a large area.

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