High efficiency, high power multiquantum well IMPATT device with

Details High efficiency, high power multiquantum well IMPATT device with High efficiency, high power multiquantum well IMPATT device with

1992-12-02

1995-11-14

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

Microwave transit time device

257 21, 257 15, 257 23, 257186, 257625, H01L 2990, H01L 3110

Patent

active

054669650

ABSTRACT:
Multiple quantum wells within an impact avalanche transit time device (IMPATT) utilizing a plurality of gallium arsenide/aluminum gallium arsenide heterojunctions are used to provide a high power, high frequency, high efficiency device operating at 50 GHz and up. The multiple quantum wells defined by the heterojunctions between pairs of gallium arsenide quantum wells and aluminum gallium arsenide barrier layers improves the nonlinearity of the avalanche process within the gallium arsenide quantum wells and reduces the ionization rate saturation limitations. Optical injection locking of the current through the IMPATT device is achieved by irradiating the active layer of the IMPATT device with modulated laser light.

REFERENCES:
patent: 3510734 (1970-05-01), Mankarious et al.
patent: 4716449 (1987-12-01), Miller
patent: 4857972 (1989-08-01), Jorke et al.
patent: 4866488 (1989-09-01), Frensley
patent: 5216260 (1993-06-01), Schubert et al.

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