High efficiency GaInP NIP solar cells

Details High efficiency GaInP NIP solar cells High efficiency GaInP NIP solar cells

1996-12-16

1999-06-15

Chapman, Mark

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

H01L 3100

Patent

active

059118393

ABSTRACT:
The present invention is related to a high efficiency indium gallium phosphide NIP solar cell, wherein an intrinsic layer between a emitter layer and base layer can suppress the Zn memory effect and interdiffusion and also a higher doping concentration in n-type AlInP window layer can be attained and the lifetime of minority carriers also increase for improving the conversion efficiency, thus the present invention may be used in the superhigh efficiency tandom cell so as to be used in the space or in earth as an regenerated energy.

REFERENCES:
patent: 5217539 (1993-06-01), Fraas et al.
patent: 5316593 (1994-05-01), Olson et al.
patent: 5342453 (1994-08-01), Olson

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