High efficiency bias circuit for high frequency inductively load

Details High efficiency bias circuit for high frequency inductively load High efficiency bias circuit for high frequency inductively load

1983-09-16

1986-05-13

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307254, 307270, 307300, H03K 1704

Patent

active

045889040

ABSTRACT:
A turn off circuit for an inductivity loaded power switching transistor utilizes a transistor current path in the base circuit and two series connected diode junctions in the emitter circuit to reverse bias the base-emitter junction of the power switching transistor without the need for an active reverse bias voltage source.

REFERENCES:
patent: 3073969 (1963-01-01), Skillen
patent: 3235746 (1966-02-01), Karnaugh
patent: 3243510 (1966-03-01), Winston
patent: 4221979 (1980-09-01), Ahmed
patent: 4239989 (1980-12-01), Brajder
patent: 4266149 (1981-05-01), Yoshida

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