Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-07-19
2011-07-19
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S517000, C257SE29187, C257SE27074
Reexamination Certificate
active
07982282
ABSTRACT:
A semiconductor amplifier is provided comprising, a substrate and one or more unit amplifying cells (UACs) formed on the substrate, wherein each UAC is laterally surrounded by a first lateral dielectric filled trench (DFT) isolation wall extending at least to the substrate and multiple UACs are surrounded by a second lateral DFT isolation wall of similar depth outside the first isolation walls, and further semiconductor regions lying between the first isolation walls when two or more unit cells are present, and/or lying between the first and second isolation walls, are electrically floating with respect to the substrate. This reduces the parasitic capacitance of the amplifying cells and improves the power added efficiency. Excessive leakage between buried layer contacts when using high resistivity substrates is avoided by providing a further semiconductor layer of intermediate doping between the substrate and the buried layer contacts.
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Griesbach Brian D.
Keller Theresa M.
Keys Joel M.
Wipf Sandra J.
Yu Evan F.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Mandala Victor
Stowe Scott
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